MOSFETs 600V, 13A, Single N-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 260 mOhms |
Channel Mode | Enhancement |
Pd - Power Dissipation | 32.1 W |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Qg - Gate Charge | 30 nC |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Vgs - Gate-Source Voltage | 30 V |
Id - Continuous Drain Current | 13 A |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |