TSM60NB1R4CP ROG

MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet

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MOSFETs 600V, 3A, Single N-Channel Power MOSFET
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Products specifications

Pd - Power Dissipation	28.4 W
Qg - Gate Charge	7.12 nC
Packaging	Reel
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	3 A
Number of Channels	1 Channel
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Pd - Power Dissipation	28.4 W
Qg - Gate Charge	7.12 nC
Packaging	Reel
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	3 A
Number of Channels	1 Channel
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	600 V