MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet
Products specifications
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 7.12 nC |
Pd - Power Dissipation | 28.4 W |
Rds On - Drain-Source Resistance | 1 Ohms |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Technology | Si |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 3 A |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Minimum Operating Temperature | - 55 C |