TSM60NB190CZ C0G

MOSFET 600V, 18A, Single N- Channel Power MOSFET

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MOSFETs 600V, 18A, Single N-Channel Power MOSFET
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Products specifications

Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Pd - Power Dissipation	150.6 W
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	18 A
Transistor Polarity	N-Channel
Qg - Gate Charge	31 nC
Minimum Operating Temperature	- 55 C
Configuration	Single
Packaging	Tube
Rds On - Drain-Source Resistance	170 mOhms

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Products specifications

Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Pd - Power Dissipation	150.6 W
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	18 A
Transistor Polarity	N-Channel
Qg - Gate Charge	31 nC
Minimum Operating Temperature	- 55 C
Configuration	Single
Packaging	Tube
Rds On - Drain-Source Resistance	170 mOhms