MOSFET 600V, 18A, 0.19 N Channel Power Mosfet
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 150.6 W |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 18 A |
Qg - Gate Charge | 31 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 170 mOhms |
Packaging | Cut Tape, Reel |
Technology | Si |
Transistor Polarity | N-Channel |
Configuration | Single |
Channel Mode | Enhancement |