MOSFET 600V, 18A, Single N- N-Chan Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Qg - Gate Charge | 31 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 33.8 W |
Id - Continuous Drain Current | 18 A |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Technology | Si |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 190 mOhms |