MOSFET MOSFET, Single, N-Ch SJ, 600V, 18A
Products specifications
Pd - Power Dissipation | 59.5 W |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 32 nC |
Configuration | Single |
Rds On - Drain-Source Resistance | 170 mOhms |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Packaging | Tube |
Id - Continuous Drain Current | 18 A |
Vds - Drain-Source Breakdown Voltage | 600 V |