MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 24A
Products specifications
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Configuration | Single |
Qg - Gate Charge | 43 nC |
Rds On - Drain-Source Resistance | 124 mOhms |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 24 A |
Pd - Power Dissipation | 62.5 W |