MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 38A
Products specifications
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 62 nC |
Configuration | Single |
Pd - Power Dissipation | 298 W |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 86 mOhms |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Number of Channels | 1 Channel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Id - Continuous Drain Current | 38 A |