MOSFETs Power MOSFET, N-CHAN 600V, 6A, 750mOhm
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Configuration | Single |
Qg - Gate Charge | 10.8 nC |
Rds On - Drain-Source Resistance | 530 mOhms |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 6 A |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 62.5 W |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |