MOSFET Power MOSFET, N-CHAN 600V, 8A, 600mOhm
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 32 W |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 490 mOhms |
Configuration | Single |
Id - Continuous Drain Current | 8 A |
Qg - Gate Charge | 13 nC |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |