MOSFET Power MOSFET, N-CHAN 600V, 11A, 380mOhm
Products specifications
Channel Mode | Enhancement |
Qg - Gate Charge | 20.5 nC |
Rds On - Drain-Source Resistance | 310 mOhms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 11 A |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 33 W |