MOSFET 700V Power MOSFET Superjunction N-chan
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Mounting Style | Through Hole |
Pd - Power Dissipation | 125 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Id - Continuous Drain Current | 11 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Configuration | Single |
Rds On - Drain-Source Resistance | 310 mOhms |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Qg - Gate Charge | 20.5 nC |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |