MOSFETs Power MOSFET, N-CHAN 600V, 3.3A, 1400mOh
Lead Time: 0 Days
Products specifications
Rds On - Drain-Source Resistance | 880 mOhms |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 3.3 A |
Qg - Gate Charge | 7.7 nC |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 38 W |