MOSFETs -30V, -4.7A, Single P-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Rds On - Drain-Source Resistance | 44 mOhms |
Qg - Gate Charge | 5.1 nC |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 4.7 A |
Technology | Si |
Channel Mode | Enhancement |
Pd - Power Dissipation | 2.1 A |