MOSFET 250V 8Amp N channel Power Mosfet
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 250 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 8.4 nC |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 500 mOhms |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 52 W |
Minimum Operating Temperature | - |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Packaging | Reel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 8 A |
Vgs th - Gate-Source Threshold Voltage | 3 V |