MOSFET MOSFET, Single, N-Ch Planar, 500V, 5A
Products specifications
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 500 V |
Pd - Power Dissipation | 89 W |
Qg - Gate Charge | 15 nC |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Rds On - Drain-Source Resistance | 1.2 Ohms |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 5 A |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Technology | Si |