MOSFET 500V, 5Amp, 1,38ohm N channel Mosfet
Products specifications
Vds - Drain-Source Breakdown Voltage | 500 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 5 A |
Pd - Power Dissipation | 83 W |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Rds On - Drain-Source Resistance | 1.2 Ohms |
Packaging | Cut Tape, Reel |
Transistor Polarity | N-Channel |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 15 nC |