MOSFETs 30V, 107A, Dual N-Channel Power MOSFET;30V, 38A, Dual N-Channel Power MOSFET
Products specifications
Id - Continuous Drain Current | 38 A, 107 A |
Rds On - Drain-Source Resistance | 8.8 mOhms, 2.7 mOhms |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Pd - Power Dissipation | 30 W, 69 W |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 9.3 nC, 49 nC |
Packaging | Reel |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Configuration | Dual |
Vgs - Gate-Source Voltage | 10 V |