MOSFET 20V Dual P-Channel MOSFET
Products specifications
Packaging | Cut Tape, Reel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 42 mOhms |
Vgs - Gate-Source Voltage | 4.5 V |
Vgs th - Gate-Source Threshold Voltage | 300 mV |
Technology | Si |
Configuration | Single |
Id - Continuous Drain Current | 4.7 A |
Pd - Power Dissipation | 620 mW |
Qg - Gate Charge | 9.6 nC |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |