MOSFET 20V P channel Power Mosfet
Products specifications
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 9.6 nC |
Id - Continuous Drain Current | 4.7 A |
Vds - Drain-Source Breakdown Voltage | 20 V |
Rds On - Drain-Source Resistance | 57 mOhms |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Technology | Si |
Pd - Power Dissipation | 1.56 W |
Channel Mode | Enhancement |
Configuration | Single |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 4.5 V |