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MOSFET 650V 4A Single N-Chan Pwr MOSFET

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MOSFET 650V 4A Single N-Chan Pwr MOSFET

Products specifications

Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	2.6 Ohms
Transistor Polarity	N-Channel
Technology	Si
Packaging	Tube
Id - Continuous Drain Current	4 A

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Products specifications

Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	2.6 Ohms
Transistor Polarity	N-Channel
Technology	Si
Packaging	Tube
Id - Continuous Drain Current	4 A