MOSFET 650V 4A Single NChnl Power MOSFET
Products specifications
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 2.6 Ohms |
Vds - Drain-Source Breakdown Voltage | 650 V |
Qg - Gate Charge | 16.8 nC |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 41.6 W |
Packaging | Tube |
Id - Continuous Drain Current | 4 A |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Technology | Si |
Configuration | Single |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |