MOSFETs 500V, 4A, Single N-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
Id - Continuous Drain Current | 4 A |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 2.4 Ohms |
Vds - Drain-Source Breakdown Voltage | 500 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Packaging | Reel |
Pd - Power Dissipation | 83 W |
Configuration | Single |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 2.2 V |
Qg - Gate Charge | 12 nC |