MOSFET 650V 4AMP N-Channel Power MOSFET
Products specifications
Channel Mode | Enhancement |
Configuration | Single |
Pd - Power Dissipation | 70 W |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 4 A |
Rds On - Drain-Source Resistance | 2.7 Ohms |
Technology | Si |
Qg - Gate Charge | 13.46 nC |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Reel |