MOSFETs 650V, 4A, Single N-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs th - Gate-Source Threshold Voltage | 3.6 V |
Rds On - Drain-Source Resistance | 2.7 Ohms |
Configuration | Single |
Number of Channels | 1 Channel |
Qg - Gate Charge | 13.46 nC |
Technology | Si |
Id - Continuous Drain Current | 4 A |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 50 W |
Packaging | Cut Tape, Reel |