MOSFET 650V N channel Mosfet
Products specifications
Rds On - Drain-Source Resistance | 2.7 Ohms |
Vgs th - Gate-Source Threshold Voltage | 3.6 V |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 4 A |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Reel |
Mounting Style | Through Hole |
Qg - Gate Charge | 13.46 nC |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Pd - Power Dissipation | 50 W |
Channel Mode | Enhancement |