MOSFETs 600V, 4A, Single N-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
Configuration | Single |
Rds On - Drain-Source Resistance | 2.5 Ohms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 4 A |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 14.5 nC |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 50 W |
Packaging | Reel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |