TSM4NB60CI C0G

MOSFETs 600V, 4A, Single N-Channel Power MOSFET
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SKU: TSM4NB60CI C0G

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MOSFETs 600V, 4A, Single N-Channel Power MOSFET
Lead Time: 0 Days

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	14.5 nC
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	2.2 Ohms
Channel Mode	Enhancement
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, Reel
Technology	Si
Id - Continuous Drain Current	4 A
Pd - Power Dissipation	25 W

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Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	14.5 nC
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	2.2 Ohms
Channel Mode	Enhancement
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, Reel
Technology	Si
Id - Continuous Drain Current	4 A
Pd - Power Dissipation	25 W