MOSFET 600V N channl Mosfet
Products specifications
Id - Continuous Drain Current | 4 A |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 2.5 Ohms |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 14.5 nC |
Pd - Power Dissipation | 25 W |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Tube |
Technology | Si |