MOSFET 600V N channel Mosfet
Products specifications
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Channel Mode | Enhancement |
Packaging | Reel |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Configuration | Single |
Pd - Power Dissipation | 50 W |
Rds On - Drain-Source Resistance | 2.2 Ohms |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 14.5 nC |
Id - Continuous Drain Current | 4 A |