TSM4NB60CH C5

MOSFETs 600V, 4A, Single N-Channel Power MOSFET

SKU: TSM4NB60CH C5G

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15000+

Price

R 10.36

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MOSFETs 600V, 4A, Single N-Channel Power MOSFET

Products specifications

Id - Continuous Drain Current	4 A
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	2.5 Ohms
Number of Channels	1 Channel
Pd - Power Dissipation	50 W
Qg - Gate Charge	14.5 nC
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V
Mounting Style	Through Hole
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Tube
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel

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Products specifications

Id - Continuous Drain Current	4 A
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	2.5 Ohms
Number of Channels	1 Channel
Pd - Power Dissipation	50 W
Qg - Gate Charge	14.5 nC
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V
Mounting Style	Through Hole
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Tube
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel