MOSFET 500V N channel Mosfet
Products specifications
Pd - Power Dissipation | 45 W |
Id - Continuous Drain Current | 3 A |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 7.6 nC |
Rds On - Drain-Source Resistance | 2.3 Ohms |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Packaging | Reel |
Vgs - Gate-Source Voltage | 10 V |