MOSFET 900V 4Amp N channel Mosfet
Products specifications
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 4 A |
Pd - Power Dissipation | 123 W |
Vds - Drain-Source Breakdown Voltage | 900 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 3.2 Ohms |
Technology | Si |
Qg - Gate Charge | 25 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Reel |