MOSFET 900V 4A N Channel Mosfet
Products specifications
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Packaging | Tube |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 3.2 Ohms |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 4 A |
Qg - Gate Charge | 25 nC |
Pd - Power Dissipation | 123 W |