MOSFET 800V 4Amp N channel Mosfet
Products specifications
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Configuration | Single |
Technology | Si |
Pd - Power Dissipation | 123 W |
Rds On - Drain-Source Resistance | 2.5 Ohms |
Packaging | Reel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 4 A |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 800 V |
Qg - Gate Charge | 20 nC |