MOSFET 800V 4A N Channel Power Mosfet
Products specifications
Pd - Power Dissipation | 38.7 W |
Number of Channels | 1 Channel |
Packaging | Tube |
Transistor Polarity | N-Channel |
Configuration | Single |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 2.5 Ohms |
Id - Continuous Drain Current | 4 A |
Vds - Drain-Source Breakdown Voltage | 800 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Mounting Style | Through Hole |
Qg - Gate Charge | 20 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |