MOSFET 600V, 4Amp, 2,5ohm N channel Mosfet
Products specifications
Technology | Si |
Configuration | Single |
Minimum Operating Temperature | - |
Id - Continuous Drain Current | 4 A |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 86.2 W |
Packaging | Reel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 12 nC |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Rds On - Drain-Source Resistance | 2 Ohms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |