MOSFETs -30V, -4.9A, Dual P-Channel Power MOSFET
Lead Time: 210 Days
Products specifications
Pd - Power Dissipation | 2.5 W |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Packaging | Cut Tape, Reel |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | P-Channel, PNP |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 28 nC |
Configuration | Dual |
Id - Continuous Drain Current | 4.9 A |
Number of Channels | 2 Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 50 mOhms |