TSM4946DCS RLG

MOSFET Dual 30V N Channel Mosfet

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MOSFETs 60V, 4.5A, Dual N-Channel Power MOSFET
Lead Time: 112 Days

Products specifications

Technology	Si
Channel Mode	Enhancement
Id - Continuous Drain Current	4.5 A
Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	2.4 W
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	45 mOhms
Qg - Gate Charge	19 nC
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Channel Mode	Enhancement
Id - Continuous Drain Current	4.5 A
Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	2.4 W
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	45 mOhms
Qg - Gate Charge	19 nC
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel