MOSFETs 30V, 5.9A, Dual N-Channel Power MOSFET
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1 V |
Pd - Power Dissipation | 3 W |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Qg - Gate Charge | 13 nC |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, Reel |
Number of Channels | 2 Channel |
Rds On - Drain-Source Resistance | 32 mOhms |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 5.9 A |
Vds - Drain-Source Breakdown Voltage | 30 V |
Configuration | Dual |
Transistor Polarity | N-Channel |