MOSFETs -30V, -7.1A, Dual P-Channel Power MOSFET
Products specifications
Packaging | Reel |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 20 mOhms |
Channel Mode | Enhancement |
Pd - Power Dissipation | 2 W |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Dual |
Transistor Polarity | P-Channel, PNP |
Qg - Gate Charge | 33 nC |
Number of Channels | 2 Channel |
Technology | Si |
Id - Continuous Drain Current | 7.1 A |