MOSFETs -60V, -20A, Single P-Channel Power MOSFET
Products specifications
Pd - Power Dissipation | 40 W |
Mounting Style | Through Hole |
Transistor Polarity | P-Channel |
Qg - Gate Charge | 22.4 nC |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 50 C |
Rds On - Drain-Source Resistance | 39 mOhms |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Packaging | Reel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Technology | Si |
Id - Continuous Drain Current | 20 A |