MOSFETs 20V, 28A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Rds On - Drain-Source Resistance | 16 mOhms |
Vgs - Gate-Source Voltage | 4.5 V |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Technology | Si |
Configuration | Single |
Qg - Gate Charge | 12.3 nC |
Id - Continuous Drain Current | 28 A |