MOSFET 30V P-channel MOSFET
Products specifications
Id - Continuous Drain Current | 11 A |
Pd - Power Dissipation | 2.5 W |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 64 nC |
Vds - Drain-Source Breakdown Voltage | 30 V |
Configuration | Single |
Transistor Polarity | P-Channel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Packaging | Reel |
Rds On - Drain-Source Resistance | 10 mOhms |