MOSFET 20V N channel Mosfet
Products specifications
Configuration | Single |
Rds On - Drain-Source Resistance | 23 mOhms |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 20 V |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Pd - Power Dissipation | 2.5 W |
Vgs th - Gate-Source Threshold Voltage | 650 mV |
Packaging | Cut Tape, Reel |
Qg - Gate Charge | 11.2 nC |
Vgs - Gate-Source Voltage | 4.5 V |
Id - Continuous Drain Current | 8 A |