TSM3N90CZ C0G

MOSFETs 900V 2.5A Single N-C hannel Power MOSFET
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SKU: TSM3N90CZ C0G

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R 59.29

R 49.28

R 39.53

R 36.10

R 32.68

R 29.51

R 25.80

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MOSFETs 900V 2.5A Single N-C hannel Power MOSFET
Lead Time: 0 Days

Products specifications

Technology	Si
Packaging	Tube
Configuration	Single
Qg - Gate Charge	17 nC
Pd - Power Dissipation	94 W
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	4.3 Ohms
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	2.5 A
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Technology	Si
Packaging	Tube
Configuration	Single
Qg - Gate Charge	17 nC
Pd - Power Dissipation	94 W
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	4.3 Ohms
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	2.5 A
Transistor Polarity	N-Channel
Number of Channels	1 Channel