MOSFET 900V 3A N Channel Power Mosfet
Products specifications
Configuration | Single |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Technology | Si |
Qg - Gate Charge | 17 nC |
Id - Continuous Drain Current | 2.5 A |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 94 W |
Vds - Drain-Source Breakdown Voltage | 900 V |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 4.3 Ohms |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |