MOSFET MOSFET, Single, N-Ch Planar, 900V, 2.5A
Products specifications
Channel Mode | Enhancement |
Technology | Si |
Qg - Gate Charge | 17 nC |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 900 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 4.3 Ohms |
Configuration | Single |
Pd - Power Dissipation | 32 W |
Id - Continuous Drain Current | 2.5 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Packaging | Tube |