MOSFET 800V 3A N Channel Power Mosfet
Products specifications
Vds - Drain-Source Breakdown Voltage | 800 V |
Configuration | Single |
Pd - Power Dissipation | 94 W |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 3 A |
Rds On - Drain-Source Resistance | 4.2 Ohms |
Qg - Gate Charge | 19 nC |
Technology | Si |
Mounting Style | Through Hole |